Max. Repetitive Peak Reverse Voltage VRRM (V)Max. Repetitive Peak Forward Current IFRM (A)Max. Peak Forward Surge Current IFSM (A)Max. Forward Voltage Dropat Ta=25°C VF @ IF (V)Max. Forward Voltage Dropat Ta=25°C VF @ IF (A)Max. Reverse Current at Ta=25°C IR (A)Package Outline3.065(Ta)60-800.74 3.0 0.6DO-201AD
MBR360 |
RFQ for MBR360 |
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| Technical/Catalog Information | MBR360RL |
| Vendor | ON Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 60V |
| Current - Average Rectified (Io) | 3A |
| Voltage - Forward (Vf) (Max) @ If | 740mV @ 3A |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 600A @ 60V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Through Hole, Axial |
| Package / Case | DO-201AD, Axial |
| Packaging | Cut Tape (CT) |
| Capacitance @ Vr, F | - |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MBR360RL MBR360RL MBR360RLOSCT ND MBR360RLOSCTND MBR360RLOSCT |
| Product | Manufacturers | Pack | D/C | |||||||
| MBR360 | ON Semiconductor | DO201A | 05+ |
The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.
Features |
| ·Low profile, axial leaded outline·High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance·Very low forward voltage drop·High frequency operation·Guard ring for enhanced ruggedness and long term reliability |
| Parameters | Value | Units | Conditions | |
| IF(AV) Max. Average Forward Current * See Fig. 4 |
3.0 | A | 50% duty cycle @ TL = 50, rectangular wave form | |
| IFSM Max. Peak One Cycle Non-Repetitive Surge Current * See Fig. 6 |
460 | A | 5s Sine or 3s Rect. pulse | Following any rated load condition and with rated VRRM applied |
| 80 | 10ms Sine or 6ms Rect. pulse | |||
| EAS Non-Repetitive Avalanche Energy | 5.0 | mJ | TJ = 25 , IAS = 1 Amps, L = 10 mH | |
| IAR Repetitive Avalanche Current | 1.0 | A | Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical | |
| Models | MFG | Pack |
| MBR 2060CT | ||
| MBR 3060CT | ||
| MBR0520 | SOD123 | |
| MBR0520\2B | ||
| MBR0520L | ON Semiconductor | |
| MBR0520L_NL | ||
| MBR0520LT | ||
| MBR0520LT1 | ||
| MBR0520LT1 / B2 | ||
| MBR0520LT1 /B2 | ||
| MBR0520LT1/B2Y | ||
| MBR0520LT1G | ||
| MBR0520LT3 | SOD-123 | |
| MBR0520LT3G | ||
| MBR0520-T | ||
| MBR0520T1 | ||
| MBR0520T1G | ||
| MBR052LT3 | ||
| MBR0530 | ON Semiconductor | |
| MBR0530LT1 | ||
| MBR0530LT1G | ||
| MBR0530PBF | ||
| MBR0530T | ||
| MBR0530-T | ||
| MBR0530T1 | ||
| MBR0530T1 / B3P | ||
| MBR0530T1/B3 | ||
| MBR0530T1G | ||
| MBR0530T3 | ||
| MBR0540 | ON Semiconductor | |
| MBR358 | ||
| MBR356 | ||
| MBR354 | ||
| MBR352 | ||
| MBR3510 | ||
| MBR351 | ||
| MBR350RLG | ||
| MBR350RL | ||
| MBR3505 | ||
| MBR350, MBR360 | ||
| MBR350 | ||
| MBR340G | ||
| MBR340 | ||
| MBR330 | ||
| MBR320 | ||
| MBR3100RLG | ||
| MBR3100RL | ||
| MBR30L60CTG | ||
| MBR30L45CTG | ||
| MBR30HxxCT |